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2SD882E(TO-252) PDF预览

2SD882E(TO-252)

更新时间: 2024-11-19 14:47:47
品牌 Logo 应用领域
友顺 - UTC /
页数 文件大小 规格书
3页 59K
描述
Transistor

2SD882E(TO-252) 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:compliant风险等级:5.61
最大集电极电流 (IC):3 A配置:Single
最小直流电流增益 (hFE):200最高工作温度:150 °C
极性/信道类型:NPN最大功率耗散 (Abs):10 W
子类别:Other Transistors表面贴装:YES
Base Number Matches:1

2SD882E(TO-252) 数据手册

 浏览型号2SD882E(TO-252)的Datasheet PDF文件第2页浏览型号2SD882E(TO-252)的Datasheet PDF文件第3页 
UTC2SD882  
NPN EPITAXIAL SILICON TRANSISTOR  
MEDIUM POWER LOW VOLTAGE  
TRANSISTOR  
FEATURES  
*High current output up to 3A  
*Low saturation voltage  
*Complement to 2SB772  
1
APPLICATIONS  
* Audio power amplifier  
* DC-DC convertor  
* Voltage regulator  
TO-252  
1: BASE 2:COLLECTOR 3: EMITTER  
*Pb-free plating product number: 2SD882L  
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )  
PARAMETER  
Collector-base voltage  
SYMBOL  
VCBO  
VCEO  
VEBO  
Pc  
RATING  
UNIT  
V
V
40  
30  
5
Collector-emitter voltage  
Emitter-base voltage  
V
Collector dissipation( Tc=25°C)  
Collector dissipation( Ta=25°C)  
Collector current(DC)  
Collector current(PULSE)  
Base current  
10  
1
3
7
0.6  
W
W
A
A
A
Pc  
Ic  
Ic  
IB  
Junction Temperature  
Storage Temperature  
Tj  
TSTG  
150  
-55 ~ +150  
°C  
°C  
ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VCB=30V,IE=0  
MIN TYP MAX UNIT  
Collector cut-off current  
Emitter cut-off current  
DC current gain(note 1)  
ICBO  
IEBO  
hFE1  
hFE2  
1000  
1000  
nA  
nA  
VEB=3V,Ic=0  
VCE=2V,Ic=20mA  
VCE=2V,Ic=1A  
30  
100  
200  
150  
0.3  
1.0  
80  
400  
0.5  
2.0  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Current gain bandwidth product  
Output capacitance  
VCE(sat)  
VBE(sat)  
fT  
Ic=2A,IB=0.2A  
Ic=2A,IB=0.2A  
VCE=5V,Ic=0.1A  
VCB=10V,IE=0,f=1MHz  
V
V
MHz  
pF  
Cob  
45  
Note 1:Pulse test:PW<300µs,Duty Cycle<2%  
1
UTC  
UNISONIC TECHNOLOGIES CO. LTD  
QW-R209-003,B  

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