Datasheet > 2SD882_15

2SD882_15

更新时间： 2024-11-19 01:14:15

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描述
NPN Transistors

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数据手册

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2SD882_15 数据手册

SMD Type

Transistors

NPN

ansistors

2SD882

1.70 0.1

Features

Excellent hFE linearity and high hFE

hFE = 60 to 400 (VCE = 2 V, IC = 1 A)

0.42 0.1

0.46 0.1

1.Base

2.Collector

3.Emitter

Absolute Maximum Ratings Ta = 25

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current to Continuous

Collector Dissipation

Symbol

Rating

Unit

V^CBO

V^CEO

V^EBO

I^C

P^c

0.5

Junction Temperature

T^J

150

Storage Temperature

Tstg

-55 to 150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditions

Ic=100uA ,IE=0

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V^CBO

V^CEO

V^EBO

I^CBO

I^CEO

I^EBO

IC= 10 mA , IB=0

IE= 100 uA ,IC=0

VCB=40 V , IE=0

VCE=30 V , IB=0

VEB=6V , IC=0

Collector cut-off current

Emitter cut-off current

V^CE= 2V, IC= 1A

V^CE=2V, IC= 100mA

IC=2A, IB= 0.2A

400

DC current gain

h^FE

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

V^CE(sat)

V^BE(sat)

f ^T

0.5

1.5

VCE=5 V, IC=0.1mA,f = 10MHz

MHz

■ Classification of hfe(1)

Type

Range

Marking

2SD882-R

60-120

882R

2SD882-Q

2SD882-P

160-320

882P

2SD882-E

200-400

882E

100-200

882Q

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