是否Rohs认证: | 符合 | 生命周期: | Obsolete |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.75 | 风险等级: | 5.09 |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 3 A |
集电极-发射极最大电压: | 30 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 200 | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 10 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 90 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SD882EGP | CHENMKO |
获取价格 |
Transistor, | |
2SD882-E-HF | KEXIN |
获取价格 |
NPN Transistors | |
2SD882-E-T60-K | UTC |
获取价格 |
Small Signal Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, T | |
2SD882-E-T6C-B | UTC |
获取价格 |
MEDIUM POWER LOW VOLTAGE TRANSISTOR | |
2SD882-E-T6C-K | UTC |
获取价格 |
MEDIUM POWER LOW VOLTAGE TRANSISTOR | |
2SD882-E-T6C-R | UTC |
获取价格 |
MEDIUM POWER LOW VOLTAGE TRANSISTOR | |
2SD882-E-T6C-T | UTC |
获取价格 |
MEDIUM POWER LOW VOLTAGE TRANSISTOR | |
2SD882-E-T9N-B | UTC |
获取价格 |
MEDIUM POWER LOW VOLTAGE TRANSISTOR | |
2SD882-E-T9N-K | UTC |
获取价格 |
MEDIUM POWER LOW VOLTAGE TRANSISTOR | |
2SD882-E-T9N-R | UTC |
获取价格 |
MEDIUM POWER LOW VOLTAGE TRANSISTOR |