Datasheet > 2SD882-126_15

2SD882-126_15

更新时间： 2024-11-19 01:14:15

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科信 - KEXIN		/
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2页	917K
描述
NPN Transistors

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中文翻译

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数据手册

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2SD882-126_15 数据手册

DIP Type

Transistors

NPN Tr

ansistors

2SD882

TO-126

Unit:mm

8.00± 0.30

3.25± 0.20

Features

Excellent hFE linearity and high hFE

hFE = 60 to 400 (VCE = 2 V, IC = 1 A)

ø3.20± 0.10

(1.00)

(0.50)

0.75± 0.10

1.75± 0.20

1.60± 0.10

0.75± 0.10

+0.10

–0.05

0.50

2.28TYP

[2.28±0.20]

1. Base

2. Collector

3. Emitter

Absolute Maximum Ratings Ta = 25

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current to Continuous

Collector Dissipation

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

P^c

Junction Temperature

T^J

150

Storage Temperature

Tstg

-55 to 150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditions

Ic=100uA ,IE=0

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V^CBO

V^CEO

V^EBO

I^CBO

I^CEO

I^EBO

IC= 10 mA , IB=0

IE= 100 uA ,IC=0

VCB=40 V , IE=0

VCE=30 V , IB=0

VEB=6V , IC=0

Collector cut-off current

Emitter cut-off current

V^CE= 2V, IC= 1A

V^CE=2V, IC= 100mA

IC=2A, IB= 0.2A

400

DC current gain

h^FE

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

V^CE(sat)

V^BE(sat)

f ^T

0.5

1.5

VCE=5 V, IC=0.1mA,f = 10MHz

MHz

■ Classification of hfe(1)

Type

2SD882-R

60-120

2SD882-Q

100-200

2SD882-P

160-320

2SD882-E

200-400

Range

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