Datasheet > 2SD874A

2SD874A

更新时间： 2023-12-06 20:02:33

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	1837K
描述
SOT-89-3L

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数据手册

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2SD874A 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-89-3L Plastic-Encapsulate Transistors

SOT-89-3L

2SD874A TRANSISTOR (NPN)

1. ^BASE

FEATURES

Large collector power dissipation P_C

2. ^COLLECTOR

3. ^EMITTER

Low collector-emitter saturation voltage V_CE(sat)

Complementary to 2SB766A

MARKING

Y R

Y S

Solid dot = Green molding

compound device.

85-170

120-240

170-340

MAXIMUM RATINGS (T^a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Value

Unit

Collector Current -Continuous

Collector Power Dissipation

P_C

0.5

Operation Junction and

Storage Temperature Range

T_J,T_stg

-55~150

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOI_C=10μA,I_E=0

V_(BR)CEOI_C=2mA,I_B=0

V_(BR)EBOI_E=10μA,I_C=0

I_CBO

I_EBO

V_CB=20V,I_E=0

0.1

μA

Emitter cut-off current

V_EB=4V,I_C=0

h_FE(1)

h_FE(2)

V_CE(sat)

V_BE(sat)

f_T

V_CE=10V,I_C=500mA

V_CE=5V,I_C=1A

340

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

I_C=500mA,I_B=50mA

V_CE=10V,I_C=50mA,f=200MHz

V_CB=10V,I_E=0,f=1MHz

0.4

1.2

200

MHz

Collector output capacitance

C_ob

CLASSIFICATION OF h_FE(1)

Rank

Range

Marking

85-170

120-240

170-340

www.jscj-elec.com

Rev. - 2.2

12 3 4

中文翻译

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