SILICON DIFFUSED POWER TRANSISTOR
GENERAL DESCRIPTION
Highvoltage,high-speed switching npn transistors in a
metal envelope , primarily for use in switching power
circuites of colour television receivers
TO-3
QUICK REFERENCE DATA
SYMBOL
VCESM
VCEO
IC
ICM
Ptot
VCEsat
Icsat
VF
PARAMETER
CONDITIONS
MIN
MAX
1500
600
5
UNIT
V
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
VBE = 0V
-
-
-
-
-
V
A
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Diode forward voltage
A
Tmb 25
50
5
W
V
IC = 4.0A; IB = 0.8A
f = 16KHz
-
A
V
Fall time
ICsat = 4.0A; f = 16KHz
1.0
s
tf
LIMITING VALUES
SYMBOL
VCESM
VCEO
IC
PARAMETER
CONDITIONS
MIN
MAX
1500
600
5
UNIT
V
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
VBE = 0V
-
-
V
A
Collector current peak value
Base current (DC)
-
A
ICM
IB
-
1
A
Base current peak value
Total power dissipation
Storage temperature
-
-
A
IBM
Ptot
Tstg
Tj
Tmb 25
50
W
-55
-
150
150
Junction temperature
ELECTRICAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
0.1
UNIT
mA
Collector-emitter cut-off current
VBE = 0V; VCE = VCESMmax
VBE = 0V; VCE = VCESMmax
Tj = 125
-
-
ICE
ICES
0.2
mA
Collector-emitter sustaining voltage
IB = 0A; IC = 100mA
L = 25mH
-
V
VCEOsust
Collector-emitter saturation voltages
Base-emitter satuation voltage
DC current gain
IC = 4.0A; IB = 0.8A
IC = 4.0A; IB = 0.8A
IC = 1.0A; VCE = 5V
-
-
5
V
V
VCEsat
VBEsat
hFE
VF
fT
Cc
1.5
40
8
Diode forward voltage
V
MHz
pF
s
Transition frequency at f = 1MHz
Collector capacitance at f = 1MHz
Switching times(16KHz line deflecton circuit)
Turn-off storage time Turn-off fall time
IC =1.0A; VCE = 10V
VCB = 10V
1.0
-
165
-
IC=4.0A,IB1=-IB2=0.8A,VCC=105V
IC=4.0A,IB1=-IB2=0.8A,VCC=105V
ts
tf
1.0
s
Wing Shing Computer Components Co., (H.K.)Ltd.
Homepage: http://www.wingshing.com
Tel:(852)2341 9276 Fax:(852)2797 8153
E-mail: wsccltd@hkstar.com