Datasheet > 2SD814-R

2SD814-R

更新时间： 2024-02-15 19:50:07

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科信 - KEXIN		/
页数	文件大小	规格书
2页	1020K
描述
NPN Transistors

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中文翻译

获取价格

数据手册

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2SD814-R 数据手册

SMD Type

Transistors

NPN Transistors

2SD814

SOT-23-3

Unit: mm

+0.2

-0.1

2.9

0.4

+0.1

-0.1

■ Features

● High collector to emitter voltage VCEO

● Low noise voltage NV..

● Complimentary to 2SB792

+0.02

-0.02

+0.1

-0.1

0.15

0.95

+0.1

-0.2

1.9

1. Base

2. Emitter

3. Collector

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Symbol

Rating

150

Unit

VCBO

VCEO

VEBO

150

Collector Current - Continuous

Collector Current - Pulse

Collector Power Dissipation

Junction Temperature

℃

100

200

150

Storage Temperature Range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Ic= 100 μA， I = 0

Ic= 1 mA， I = 0

= 100μA， I = 0

CB= 100 V , I = 0

EB= 4V , I =0

Min

150

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

CBO

EBO

100

Collector-emitter saturation voltage

Base - emitter saturation voltage

DC current gain

CE(sat)

BE(sat)

=30 mA, I

=3mA

C=30 mA, I

=3mA

1.2

330

hFE

^CE= 5V, I

C= 10mA

^CE= 10V, I

= 1mA, G

= 80dB

Noise voltage

150

= 100kW, Function = FLAT

Collector output capacitance

Transition frequency

^CB= 10V, I

CE= 10V, I

= 0,f=1MHz

= -10mA,f=200MHz

2.3

150

MHz

■ Classification of hfe

Type

Range

Marking

2SD814-Q

90-155

2SD814-R

130-220

2SD814-S

185-330

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