SMD Type
Transistors
NPN Transistors
2SD814-HF
SOT-23
Unit: mm
+0.1
-0.1
2.9
0.4
+0.1
-0.1
■ Features
3
● High collector to emitter voltage VCEO
● Low noise voltage NV.
.
● Complimentary to 2SB792-HF
1
2
+0.1
-0.1
+0.05
-0.01
0.95
0.1
● Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
+0.1
-0.1
1.9
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Symbol
Rating
150
150
5
Unit
V
VCBO
VCEO
VEBO
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
Collector Power Dissipation
Junction Temperature
I
C
50
mA
mW
℃
I
cp
100
200
150
P
C
T
J
Storage Temperature Range
T
stg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Ic= 100 μA, I = 0
Ic= 1 mA, I = 0
= 100μA, I = 0
CB= 100 V , I = 0
EB= 4V , I =0
Min
150
150
5
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
VCBO
VCEO
VEBO
E
B
I
E
C
I
CBO
EBO
V
V
E
100
100
1
nA
V
I
C
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
V
CE(sat)
BE(sat)
I
I
C
=30 mA, I
B
B
=3mA
V
C=30 mA, I
=3mA
1.2
330
hFE
V
CE= 5V, I
C
= 10mA
= 1mA, G
= 100kW, Function = FLAT
90
V
R
CE = 10V, I
g
C
V = 80dB
Noise voltage
NV
150
mV
Collector output capacitance
Transition frequency
C
ob
T
V
V
CB= 10V, I
CE= 10V, I
E
= 0,f=1MHz
= -10mA,f=200MHz
2.3
pF
f
E
150
MHz
■ Classification of hfe
Type
Range
Marking
2SD814-Q-HF
90-155
2SD814-R-HF
130-220
2SD814-S-HF
185-330
PQ
F
PR
F
PS
F
1
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