Datasheet > 2SD794R

2SD794R

更新时间： 2024-10-01 20:33:03

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
1页	250K
描述
Transistor

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中文翻译

获取价格

技术参数
数据手册

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2SD794R 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.59
Base Number Matches：	1

2SD794R 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-126C Plastic-Encapsulate Transistors

2SD794/794A TRANSISTOR (NPN)

TO- 126C

FEATURES

High Voltage and Large Current Capacity

Complementary to 2SB744,2SB744A

1. EMITTER

2. COLLECTOR

3. BASE

MAXIMUM RATINGS (T^a=25 ℃ unless otherwise noted)

Symbol

V_CBO

Parameter

Collector-Base Voltage

Collector-Emitter Voltage 2SD794

2SD794A

Value

Unit

V_CEO

V_EBO

I_C

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature

P_C

℃

T_J

150

T_stg

-55 to +150

ELECTRICAL CHARACTERISTICS (Ta=25 ℃

unless otherwise specified

)

Parameter

Symbol

V_(BR)CBO

Test conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

I_C=100µA,I_E=0

I_C=1mA,I_B=0

2SD794

Collector-emitter breakdown voltage

V_(BR)CEO

2SD794A

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

V_(BR)EBO

I_CBO

I_E=100µA,I_C=0

µA

V_CB=45V,I_E=0

I_EBO

V_EB=3V,I_C=0

h_FE(1)

h_FE(2)

V_CE(sat)

V_BE(sat)

f_T

V_CE=5V,I_C=20mA

V_CE=5V,I_C=0.5A

I_C=1.5A,I_B=0.15A

V_CE=5V,I_C=100mA

V_CB=10V,I_E=0,f=1MHz

DC current gain

320

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

MHz

Collector output capacitance

C_ob

CLASSIFICATION OF h_FE(2)

Rank

60-120

100-200

160-320

Range

Marking

A,Jun,2011

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