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2SD794AQ

更新时间: 2024-11-12 08:22:51
品牌 Logo 应用领域
江苏长电/长晶 - CJ /
页数 文件大小 规格书
1页 250K
描述
Transistor

2SD794AQ 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.59
Base Number Matches:1

2SD794AQ 数据手册

  
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD  
TO-126C Plastic-Encapsulate Transistors  
2SD794/794A TRANSISTOR (NPN)  
TO- 126C  
FEATURES  
z
z
High Voltage and Large Current Capacity  
Complementary to 2SB744,2SB744A  
1. EMITTER  
2. COLLECTOR  
3. BASE  
MAXIMUM RATINGS (Ta=25 unless otherwise noted)  
Symbol  
VCBO  
Parameter  
Collector-Base Voltage  
Collector-Emitter Voltage 2SD794  
2SD794A  
Value  
Unit  
70  
V
45  
VCEO  
V
60  
VEBO  
IC  
Emitter-Base Voltage  
5
V
A
Collector Current -Continuous  
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
3
PC  
1
W
TJ  
150  
Tstg  
-55 to +150  
ELECTRICAL CHARACTERISTICS (Ta=25  
unless otherwise specified  
)
Parameter  
Symbol  
V(BR)CBO  
Test conditions  
Min  
Typ  
Max  
Unit  
Collector-base breakdown voltage  
V
IC=100µA,IE=0  
IC=1mA,IB=0  
70  
2SD794  
45  
60  
Collector-emitter breakdown voltage  
V(BR)CEO  
V
2SD794A  
Emitter-base breakdown voltage  
Collector cut-off current  
Emitter cut-off current  
V(BR)EBO  
ICBO  
V
IE=100µA,IC=0  
5
µA  
µA  
VCB=45V,IE=0  
1
1
IEBO  
VEB=3V,IC=0  
hFE(1)  
hFE(2)  
VCE(sat)  
VBE(sat)  
fT  
VCE=5V,IC=20mA  
VCE=5V,IC=0.5A  
IC=1.5A,IB=0.15A  
IC=1.5A,IB=0.15A  
VCE=5V,IC=100mA  
VCB=10V,IE=0,f=1MHz  
30  
60  
DC current gain  
320  
2
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Transition frequency  
V
V
2
MHz  
pF  
60  
40  
Collector output capacitance  
Cob  
CLASSIFICATION OF hFE(2)  
R
Q
P
Rank  
60-120  
100-200  
160-320  
Range  
Marking  
A,Jun,2011  

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