Datasheet > 2SD734

2SD734

更新时间： 2023-12-06 20:11:08

品牌	Logo	应用领域
先科 - SWST		晶体管
页数	文件大小	规格书
1页	19K
描述
小信号晶体管

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2SD734 数据手册

2SD734

NPN Silicon Epitaxial Planar Transistor

for 1W Output, Electronic Governor, DC-DC

Converter Applications.

The transistor is subdivided into four groups D, E,

F and G, according to its DC current gain.

On special request, these transistors can be

manufactured in different pin configurations.

1. Emitter 2. Collector 3. Base

TO-92 Plastic Package

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

Unit

Collector Current

700

Collector Current (Pulse)

Power Dissipation

I_CP

1500

600

P_tot

Junction Temperature

Storage Temperature Range

T_j

150

T_stg

- 55 to + 150

Characteristics at T_a= 25 C

Parameter

Symbol

Min.

Typ.

Max.

Unit

DC Current Gain

at V_CE= 2 V, I_C= 50 mA

Current Gain Group

h_FE

100

160

280

120

200

320

560

at V_CE= 2 V, I_C= 500 mA

Collector Base Cutoff Current

at V_CB= 20 V

Emitter Base Cutoff Current

at V_EB= 4 V

Gain Bandwidth Product

at V_CE= 10 V, I_C= 50 mA

Output Capacitance

I_CBO

I_EBO

f_T

µA

250

MHz

C_ob

at V_CB= 10 V, f = 1 MHz

Dated : 20/08/2016 Rev: 01

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2SD734E	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 20V V(BR)CEO \| 700MA I(C) \| TO-92
2SD734F	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 20V V(BR)CEO \| 700MA I(C) \| TO-92
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