Datasheet > 2SD717

2SD717

更新时间： 2024-09-21 22:35:55

品牌	Logo	应用领域
永盛 - Wing Shing		晶体晶体管
页数	文件大小	规格书
1页	92K
描述
Silicon Epitaxial Planar Transistor(GENERAL DESCRIPTION)

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2SD717 数据手册

Silicon Epitaxial Planar Transistor

2SD717

GENERAL DESCRIPTION

Silicon NPN high frequency, high power transistors

a plastic envelope, primarily for use in audio and

general purpose

TO-3P(I)D

QUICK REFERENCE DATA

SYMBOL

V_CBO

V_CEO

I_C

I_CM

P_tot

V_CEsat

V_F

t_f

PARAMETER

CONDITIONS

TYP

MAX

UNIT

Collector-emitter voltage peak value

Collector-emitter voltage (open base)

Collector current (DC)

V_BE= 0V

Collector current peak value

Total power dissipation

Collector-emitter saturation voltage

Diode forward voltage

T_mb25

I_C= 4.0A; I_B=0.4A

I_F= 3.5A

1.5

2.0

1.0-

Fall time

I_C=4A,I_B1=-I_B2=0.4A,V_CC=30V

0.4

LIMITING VALUES

SYMBOL

V_CESM

V_CEO

V_EBO

I_C

I_B

P_tot

T_stg

T_j

PARAMETER

CONDITIONS

MIN

MAX

UNIT

Collector-emitter voltage peak value

Collector-emitter voltage (open base)

Emitter-base oltage (open colloctor)

Collector current (DC)

V_BE= 0V

Base current (DC)

2.5

Total power dissipation

Storage temperature

Tmb 25

-55

150

Junction temperature

ELECTRICAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

TYP

MAX

0.2

UNIT

Collector-base cut-off current

Emitter-base cut-off current

Collector-emitter breakdown voltage

Collector-emitter saturation voltages

DC current gain

V_CB=70V

I_CBO

I_EBO

V_(BR)CEO

V_CEsat

h_FE

f_T

C_c

t_on

t_s

t_f

V_EB=5V

0.2

I_C=1mA

I_C= 4.0A; I_B= 0.4A

I_C= 1A; V_CE= 5V

I_C= 1A; V_CE= 12V

V_CB= 10V

350

0.3

2.5

0.4

240

Transition frequency at f = 5MHz

Collector capacitance at f = 1MHz

On times

MHz

I_C=4A,I_B1=-I_B2=0.4A,V_CC=30V

Tum-off storage time

Fall time

Wing Shing Computer Components Co., (H.K.)Ltd.

Homepage: http://www.wingshing.com

Tel:(852)2341 9276 Fax:(852)2797 8153

E-mail: wsccltd@hkstar.com

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