Datasheet > 2SD688Q

2SD688Q

更新时间： 2023-12-06 20:08:04

品牌	Logo	应用领域
先科 - SWST		/
页数	文件大小	规格书
5页	987K
描述
功率三极管

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数据手册

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2SD688Q 数据手册

2SD688Q-HAF

NPN Silicon Epitaxial Planar Power Transistor

Features

• Extremely low equivalent on resistance

• Halogen and Antimony Free(HAF),

RoHS compliant

1.Base 2.Collector 3.Emitter 4.Collector

SOT-223 Plastic Package

Applications

• Flash gun convertors

• Battery powered circuits

Absolute Maximum Ratings (T_a= 25

Parameter

)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

Peak Collector Current, Pulsed

I_CM

T_a= 25

T_c= 25

Total power dissipation

P_tot

Junction Temperature

T_j

150

Storage Temperature Range

T_stg

- 55 to + 150

Thermal Characteristics

Symbol

R_θJC

Max.

17.9

62.5

Unit

Parameter

Thermal Resistance from Junction to Case

Thermal Resistance from Junction to Ambient ¹⁾

R_θJA

¹⁾Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.

1 / 5

Dated: 18/10/2021 Rev: 01

12 3 4 5

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