Datasheet > 2SD669U

2SD669U

更新时间： 2023-12-06 20:10:26

品牌	Logo	应用领域
先科 - SWST		晶体管
页数	文件大小	规格书
5页	311K
描述
小信号晶体管

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SD669U 数据手册

2SD669U

NPN Silicon Epitaxial Planar Power Transistor

Features

• The transistor is subdivided into three groups,

B, C, and D, according to its DC current gain.

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

180

160

Collector Current

1.5

Peak Collector Current

Total power dissipation

Junction Temperature

Storage Temperature Range

I_CP

0.5

P_tot

℃

T_j

150

T_stg

- 40 to + 150

Thermal Characteristics

Parameter

Symbol

R_θJA

Max.

Unit

Thermal Resistance from Junction to Ambient

250 ¹⁾

℃/W

Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

1 / 5

Dated: 31/05/2023 Rev: 04

12 3 4 5

下载PDF

与2SD669U相关器件

型号	品牌	描述	获取价格	数据表
2SD669-X-AA3B	UTC	BIPOLAR POWER GENERAL PURPOSE TRANSISTOR	获取价格
2SD669-X-AA3K	UTC	BIPOLAR POWER GENERAL PURPOSE TRANSISTOR	获取价格
2SD669-X-AA3R	UTC	BIPOLAR POWER GENERAL PURPOSE TRANSISTOR	获取价格
2SD669-X-AA3-R	UTC	BIPOLAR POWER GENERAL PURPOSE TRANSISTOR	获取价格
2SD669-X-AB3-R	UTC	BIPOLAR POWER GENERAL PURPOSE TRANSISTOR	获取价格
2SD669XL-X-AA3-R	UTC	BIPOLAR POWER GENERAL PURPOSE TRANSISTOR	获取价格