Datasheet > 2SD669AC

2SD669AC

更新时间： 2024-11-12 20:26:11

品牌	Logo	应用领域
无锡固电 - ISC		/
页数	文件大小	规格书
5页	280K
描述
Transistor

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中文翻译

获取价格

技术参数
数据手册

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2SD669AC 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.6
Is Samacsys：	N	Base Number Matches：	1

2SD669AC 数据手册

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2SD669 2SD669A

DESCRIPTION

·With TO-126 package

·Complement to type 2SB649/649A

·High breakdown voltage V_CEO:120/160V

·High current 1.5A

·Low saturation voltage,excellent h_FElinearity

APPLICATIONS

·For low-frequency power

amplifier applications

PINNING

DESCRIPTION

Emitter

Collector;connected to

mounting base

Base

Absolute maximum ratings(Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

180

120

160

UNIT

2SD669

2SD669A

2SD669

2SD669A

V_CBO

Collector-base voltage

Open emitter

V_CEO

Collector-emitter voltage

Open base

V_EBO

I_C

Emitter-base voltage

Collector current (DC)

Collector current-peak

Open collector

1.5

I_CM

T_a=25℃

T_C=25℃

P_D

Total power dissipation

T_j

Junction temperature

Storage temperature

150

-55~150

℃

T_stg

12 3 4 5

中文翻译

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2SD669A-C-AA3-T	UTC	获取价格	BIPOLAR POWER GENERAL PURPOSE TRANSISTOR
2SD669A-C-AB3-K	UTC	获取价格	BIPOLAR POWER GENERAL PURPOSE TRANSISTOR
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2SD669A-C-AB3-T	UTC	获取价格	BIPOLAR POWER GENERAL PURPOSE TRANSISTOR
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