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2SD669 PDF预览

2SD669

更新时间: 2024-11-13 14:55:07
品牌 Logo 应用领域
江苏长电/长晶 - CJ /
页数 文件大小 规格书
4页 470K
描述
TO-126

2SD669 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.82

2SD669 数据手册

 浏览型号2SD669的Datasheet PDF文件第2页浏览型号2SD669的Datasheet PDF文件第3页浏览型号2SD669的Datasheet PDF文件第4页 
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD  
TO-126 Plastic-Encapsulate Transistors  
TRANSISTOR (NPN)  
2SD669A  
2SD669 /  
TO-126  
FEATURES  
1. EMITTER  
Low Frequency Power Amplifier Complementary  
Pair with 2SB649 / 2SB649A  
2. COLLECTOR  
3. BASE  
ꢀꢁꢂꢃꢄꢅꢆ  
Equivalent Circuit  
D669,D669A,!ꢀ-ꢁꢂꢀꢃꢂo.ꢀꢃ  
Solid dot= Green molding compound  
device, if none, the normal device  
//,ode  
D669  
D669A  
XX  
XX  
ORDERING INFORMATION  
Part Number  
2SD669  
Package  
TO-126  
TO-126  
TO-126  
TO-126  
Packing Method  
Pack Quantity  
Bulk  
Bulk  
200pcs/Bag  
200pcs/Bag  
60pcs/Tube  
60pcs/Tube  
2SD669A  
2SD669-TU  
Tube  
Tube  
2SD669A-TU  
MAXIMUM RATINGS (Ta=25unless otherwise noted)  
Symbol  
VCBO  
Parameter  
Value  
Unit  
Collector- Base Voltage  
180  
120  
160  
5
V
2SD669  
Collector-Emitter Voltage  
VCEO  
V
2SD669A  
VEBO  
Emitter-Base Voltage  
V
A
Collector Current -Continuous  
Collector Dissipation  
1.5  
IC  
PC  
1
W
Operation Junction and Storage Temperature Range  
-55-150  
TJ,Tstg  
www.jscj-elec.com  
1
Rev. - 2.0  

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