Datasheet > 2SD668B(TO-126)

2SD668B(TO-126)

更新时间： 2024-11-29 03:47:47

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
1页	105K
描述
Transistor

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数据手册

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2SD668B(TO-126) 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-126 Plastic-Encapsulate Transistors

2SD668 TRANSISTOR (NPN)

TO – 126

FEATURES

1. EMITTER

2. COLLECTOR

3. BASE

Low Frequency Power Amplifier

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Value

180

Unit

Collector-Emitter Voltage

Emitter-Base Voltage

120

Collector Current

0.05

P_C

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

R_θJA

T_j

125

℃/W

℃

150

T_stg

Storage Temperature

-55~+150

℃

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test

conditions

Min

180

120

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C=10µA,I_E=0

I_C=1mA,I_B=0

I_E= 10µA,I_C=0

V_CB=160V,I_E=0

V_EB=4V,I_C=0

μA

Emitter cut-off current

I_EBO

h_FE(1)

h_FE(2)

V_CE(sat)

V_BE

V_CE=5V, I_C=10mA

V_CE=5V, I_C=1mA

I_C=30mA,I_B=3mA

V_CE=5V, I_C=10mA

V_CB=10V,I_E=0, f=1MHz

V_CE=10V,I_C=10mA

320

DC current gain

Collector-emitter saturation voltage

Base-emitter voltage

1.5

Collector output capacitance

Transition frequency

C_ob

3.5

140

MHz

f_T

CLASSIFICATION OF h_FE(1)

RANK

RANGE

60-120

100-200

160-320

A,Dec,2010

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