Datasheet > 2SD667A

2SD667A

更新时间： 2024-11-26 14:55:43

品牌	Logo	应用领域
鲁光 - LGE		双极型晶体管
页数	文件大小	规格书
3页	777K
描述
双极型晶体管

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中文翻译

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技术参数
数据手册

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2SD667A 技术参数

极性：	NPN	Collector-emitter breakdown voltage：	100
Collector Current - Continuous：	1	DC current gain - Min：	60
DC current gain - Max：	320	Transition frequency：	140
Package：	TO-92L	Storage Temperature Range：	-55-150
class：	Transistors

2SD667A 数据手册

2SD667/2SD667A

TO-92MOD Transistor (NPN)

TO-92MOD

1. EMITTER

5.800

6.200

2. COLLECTOR

3. BASE

8.400

8.800

0.900

1.100

Features

0.400

0.600

Low frequency power amplifier

13.800

14.200

Complementary pair with 2SB647/A

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

1.500 TYP

2.900

3.100

Symbol

V_CBO

Parameter

Collector- Base Voltage

Collector-Emitter Voltage

Value

120

Units

0.000

0.380

1.600

0.400

0.500

2SD667

4.700

5.100

V_CEO

2SD667A

100

1.730

2.030

V_EBO

I_C

Emitter-Base Voltage

4.000

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

Dimensions in inches and (millimeters)

P_C

900

150

-55-150

T_J

℃

T_stg

Storage Temperature

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

MIN

120

TYP

MAX

UNIT

Collector-base breakdown voltage

V_(BR)CBOI_C=10μA,I_E=0

V_(BR)CEOI_C=1mA,I_B=0

V_(BR)EBOI_E=10μA,I_C=0

2SD667

Collector-emitter breakdown voltage

2SD667A

100

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

I_CBO

I_EBO

V_CB=100V,I_E=0

V_EB=4V,I_C=0

μA

2SD667

320

200

h_FE(1)

V_CE=5V,I_C=150mA

DC current gain

2SD667A

h_FE(2)

V_CE(sat)

V_BE

V_CE=5V,I_C=500mA

I_C=500mA,I_B=50mA

V_CE=5V,I_C=150mA

V_CB=10V,I_E=0,f=1MHz

Collector-emitter saturation voltage

Base-emitter voltage

1.5

Transition frequency

f_T

140

MHz

Collector output capacitance

CLASSIFICATION OF h_FE(1)

Rank

C_ob

2SD667

Range

60-120

100-200

160-320

2SD667A

http://www.lgesemi.com

Revision:20170701-P1

mail:lge@lgesemi.com

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