Datasheet > 2SD667A

2SD667A

更新时间： 2024-09-23 07:31:51

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SECOS		晶体晶体管
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描述
1A , 120V NPN Plastic Encapsulated Transistor

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2SD667A 数据手册

2SD667A

1A , 120V

NPN Plastic Encapsulated Transistor

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

TO-92MOD

FEATURES

ꢀ

Low Frequency Power Amplifier

Complementary Pair with 2SB647A

ꢀ

CLASSIFICATION OF h_{FE (1)}

Product-Rank

2SD667A-B

2SD667A-C

100~200

2SD667A-D

160~320

Range

60~120

1Emitter

2Collector

3Base

Collector

Millimeter

REF.

Min.

Max.

Min.

1.70

2.70

0.85

Max.

2.05

3.20

1.15

5.50

8.00

12.70

4.50

0.35

0.30

6.50

9.00

14.50

5.30

0.65

0.51

Base

1.60 Max

0.00

0.40

4.00 Min

Emitter

1.50 TYP.

ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)

Parameter

Symbol

Rating

Unit

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

V_CBO

V_CEO

V_EBO

I_C

120

100

Collector Current - Continuous

Collector Power Dissipation

Junction, Storage Temperature

P_C

0.9

°C

T_J, T_STG

150, -55~150

ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ. Max.

Unit

Test Conditions

Collector to Base Breakdown Voltage

Collector to Emitter Breakdown Voltage

Emitter to Base Breakdown Voltage

Collector Cut-Off Current

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

120

I_C=10µA, I_E=0

100

I_C=1mA, I_B=0

I_E=10µA, I_C=0

320

µA

V_CB=100V, I_E=0

Emitter Cut-Off Current

I_EBO

V_EB=4V, I_C=0

h_{FE (1)}

h_{FE (2)}

V_CE(sat)

V_BE

V_CE=5V, I_C=150mA

V_CE=5V, I_C=500mA

I_C=500mA, I_B=50mA

V_CE=5V, I_C=150mA

V_CB=10V, I_E=0, f=1MHz

DC Current Gain

Collector to Emitter Saturation Voltage

Base to Emitter Voltage

1.5

Transition Frequency

f_T

140

MHz

Collector Output Capacitance

C_ob

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

7-Oct-2011 Rev. A

Page 1 of 1

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