Datasheet > 2SD560

2SD560

更新时间： 2024-01-02 00:18:48

品牌	Logo	应用领域
SAVANTIC		晶体晶体管
页数	文件大小	规格书
3页	103K
描述
Silicon NPN Power Transistors

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中文翻译

获取价格

技术参数
数据手册

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2SD560 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

2SD560 数据手册

SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors

2SD560

DESCRIPTION

·With TO-220C package

·Complement to type 2SB601

·DARLINGTON

APPLICATIONS

·Low frequency power amplifier

·Low speed switching industrial use

PINNING

DESCRIPTION

Base

Collector;connected to

mounting base

Emitter

Absolute maximum ratings(Ta=25ꢀ )

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current (DC)

Collector current-Peak

Base current

CONDITIONS

VALUE

150

100

UNIT

Open emitter

Open base

Open collector

I_CM

I_B

0.5

T_C=25ꢀ

P_C

Collector dissipation

1.5

T_j

Junction temperature

Storage temperature

150

-50~150

ꢀ

T_stg

12 3

中文翻译

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与2SD560相关器件

型号	品牌	获取价格	描述	数据表
2SD560-AZ	ROCHESTER	获取价格	5A, 100V, NPN, Si, POWER TRANSISTOR, TO-220AB, MP-25, 3 PIN
2SD560KB	NEC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 100V V(BR)CEO \| 5A I(C) \| TO-220AB
2SD560-KB	NEC	获取价格	Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
2SD560KB-AZ	RENESAS	获取价格	TRANSISTOR,BJT,DARLINGTON,NPN,100V V(BR)CEO,5A I(C),TO-220AB
2SD560KB-S3-AZ	RENESAS	获取价格	TRANSISTOR,BJT,DARLINGTON,NPN,100V V(BR)CEO,5A I(C),TO-220AB
2SD560LB	NEC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 100V V(BR)CEO \| 5A I(C) \| TO-220AB
2SD560-LB	NEC	获取价格	Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
2SD560LB-AZ	RENESAS	获取价格	TRANSISTOR,BJT,DARLINGTON,NPN,100V V(BR)CEO,5A I(C),TO-220AB
2SD560MB	NEC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 100V V(BR)CEO \| 5A I(C) \| TO-220AB
2SD560-MB	RENESAS	获取价格	5A, 100V, NPN, Si, POWER TRANSISTOR, TO-220AB, MP-25, 3 PIN