Datasheet > 2SD5075

2SD5075

更新时间： 2022-12-21 14:09:46

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
3页	116K
描述
Silicon NPN Power Transistors

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2SD5075 数据手册

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2SD5075

DESCRIPTION

·With TO-3PML package

·High breakdown voltage

·High speed switching

APPLICATIONS

·Color TV horizontal output applications

PINNING

DESCRIPTION

Base

Collector

Emitter

Fig.1 simplified outline (TO-3PML) and symbol

Absolute maximum ratings(Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

Open emitter

VALUE

1500

800

UNIT

Open base

Open collector

3.5

I_CM

Collector current-peak

Collector power dissipation

Junction temperature

Storage temperature

P_C

T_C=25℃

℃

T_j

150

T_stg

-55~150

12 3

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