Datasheet > 2SD400D(TO-92MOD)

2SD400D(TO-92MOD)

更新时间： 2024-01-14 07:05:52

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2SD400D(TO-92MOD) 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-92MOD Plastic-Encapsulate Transistors

TO-92MOD

2SD400 TRANSISTOR (NPN)

1. EMITTER

FEATURES

Low-Frequency power Amp, Electronic Governor Applications

2. COLLECTOR

3. BASE

MAXIMUM RATINGS (T^a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Value

Unit

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

P_C

0.9

℃

T_J

150

-55-150

T_stg

Storage Temperature

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test

I_C=10µA, I_E=0

I_C=1mA, I_B=0

I_E=10µA, I_C=0

V_CB=20V, I_E=0

V_EB=4V, I_C=0

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

µA

Emitter cut-off current

I_EBO

h_FE(1)

V_CE=2V, I_C=50mA

V_CE=2V, I_C=1A

560

DC current gain

h_FE(2)

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

V_CE(sat)

V_BE(sat)

f_T

I_C=500mA, I_B=50mA

V_CE=10V, I_C=50mA

V_CB=10V, f=1MHz

0.3

1.2

180

MHz

Output Capacitance

C_ob

CLASSIFICATION OF h_FE(1)

Rank

60-120

100-200

160-320

280-560

Range

A,Jun,2011

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