Datasheet > 2SD381N

2SD381N

更新时间： 2024-11-13 06:50:27

品牌	Logo	应用领域
无锡固电 - ISC		局域网放大器晶体管
页数	文件大小	规格书
3页	89K
描述
Transistor

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中文翻译

获取价格

数据手册

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2SD381N 数据手册

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2SD381

DESCRIPTION

·With TO-220C package

·Complement to type 2SB536

·Low collector saturation voltage

APPLICATIONS

·Audio frequency power amplifier

·Low speed power switching

PINNING

DESCRIPTION

Base

Collector;connected to

mounting base

Emitter

Absolute maximum ratings(Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

VALUE

130

120

UNIT

Open emitter

Open base

Open collector

1.5

I_CM

Collector current-peak

Base current

3.0

I_B

0.3

T_a=25℃

T_C=25℃

1.5

P_T

Total power dissipation

T_j

Junction temperature

Storage temperature

150

-50~150

℃

T_stg

12 3

中文翻译

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与2SD381N相关器件

型号	品牌	获取价格	描述	数据表
2SD382	ETC	获取价格	Audio Frequency Power Amplifier,Low Speed Switching
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2SD382L	NEC	获取价格	Power Bipolar Transistor, 1.5A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy
2SD382M	NEC	获取价格	Power Bipolar Transistor, 1.5A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy
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2SD3866	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 800V V(BR)CEO \| 3A I(C) \| TO-220VAR
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