Datasheet > 2SD363

2SD363

更新时间： 2022-12-26 14:38:01

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	231K
描述
Silicon NPN Power Transistor

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2SD363 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

2SD363

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V_(BR)CEO= 120V(Min)

·Collector Power Dissipation-

: P_C= 40W(Max)@ T_C= 25℃

APPLICATIONS

·Designed for B/W TV horizontal deflection output applications.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

300

120

UNIT

Collector Current-Continuous

Collector Power Dissipation

@ T_C=25℃

P_C

℃

T_J

Junction Temperature

150

-55~150

Storage Temperature Range

T_stg

isc Website：www.iscsemi.cn

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型号	品牌	描述	获取价格	数据表
2SD365	ETC	TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 3A I(C) \| TO-220	获取价格
2SD365A	ONSEMI	TRANSISTOR TRANSISTOR,BJT,NPN,80V V(BR)CEO,3A I(C),TO-220, BIP General Purpose Power	获取价格
2SD365A	MICRO-ELECTRONICS	Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti	获取价格
2SD366	ETC	TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 3A I(C) \| TO-220	获取价格
2SD366A	ONSEMI	TRANSISTOR TRANSISTOR,BJT,NPN,80V V(BR)CEO,3A I(C),TO-220, BIP General Purpose Power	获取价格
2SD371	ISC	Silicon NPN Power Transistors	获取价格