Datasheet > 2SD350U-AH

2SD350U-AH

更新时间： 2023-12-06 20:10:58

品牌	Logo	应用领域
先科 - SWST		/
页数	文件大小	规格书
5页	247K
描述
功率三极管

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2SD350U-AH 数据手册

2SD350U-AH

NPN Silicon Epitaxial Planar Power Transistor

Features

• AEC-Q101 Qualified

• Halogen and Antimony Free(HAF), RoHS compliant

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

Value

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

V_CBO

V_CEO

V_EBO

I_C

Peak Collector Current, Pulsed

Base Current

I_CM

I_B

0.5

1 ¹⁾

Collector Power Dissipation

P_tot

1.6 ²⁾

Operating Junction and Storage Temperature Range

T_j, T_stg

- 55 to + 150

℃

Thermal Characteristics

Parameter

Symbol

R_θJA

Max.

Unit

125 ¹⁾

Thermal Resistance from Junction to Ambient

℃/W

78 ²⁾

¹⁾Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

²⁾Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.

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Dated: 29/05/2023 Rev: 02

12 3 4 5

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