Datasheet > 2SD3055R

2SD3055R

更新时间： 2024-10-15 14:55:55

品牌	Logo	应用领域
先科 - SWST		/
页数	文件大小	规格书
5页	869K
描述
功率三极管

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2SD3055R 数据手册

2SD3055R-HAF

NPN Silicon Epitaxial Planar Power Transistor

Features

• Halogen and Antimony Free(HAF),

RoHS compliant

Applications

• For power switching and amplifier applications

1.Base 2.Collector 3.Emitter

TO-252 Plastic Package

Absolute Maximum Ratings (T_a= 25

Parameter

)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

Power Dissipation

T_C= 25

P_tot

Junction Temperature

Storage Temperature Range

T_j

150

T_stg

- 55 to + 150

Thermal Characteristics

Parameter

Symbol

R_θJC

Max.

2.3

Unit

Thermal Resistance from Junction to Case

Thermal Resistance from Junction to Ambient ¹⁾

R_θJA

71.4

¹⁾Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate.

1 / 5

Dated: 08/08/2023 Rev: 02

12 3 4 5

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