2SD2695

更新时间： 2024-11-03 04:26:19

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体晶体管
页数	文件大小	规格书
5页	131K
描述
Silicon NPN Epitaxial Type (Darlington Power Transistor)

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中文翻译

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数据手册

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2SD2695 数据手册

2SD2695

TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor)

2SD2695

Micro Motor Drive, Hammer Drive Applications

Unit: mm

Switching Applications

Power Amplifier Applications

•

High DC current gain: h

= 2000 (min) (V

= 2 V, I = 1 A)

CE C

Low saturation voltage: V

= 1.5 V (max) (I = 1 A, I = 1 mA)

C B

CE (sat)

Zener diode included between collector and base

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

60 ± 10

Collector-emitter voltage

Emitter-base voltage

Collector current

Base current

0.5

JEDEC

JEITA

TO-92MOD

Collector power dissipation

Junction temperature

Storage temperature range

0.9

°C

―

150

TOSHIBA

2-5J1A

stg

−55 to 150

Weight: 0.36 g (typ.)

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating

conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Equivalent Circuit

COLLECTOR

BASE

≈ 4 kΩ

≈ 800 Ω

EMITTER

2006-11-21

12 3 4 5

中文翻译

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