2SD2562O

更新时间： 2024-11-18 12:58:51

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2SD2562O 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Darlington Power Transistor

2SD2562

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V_(BR)CEO= 150V(Min)

·High DC Current Gain-

: h_FE= 5000( Min.) @(I_C= 10A, V_CE= 4V)

·Low Collector Saturation Voltage-

: V_CE(sat)= 2.5V(Max)@ (I_C= 10A, I_B= 10mA)

·Complement to Type 2SB1649

APPLICATIONS

·Designed for series regulator and general purpose

applications.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

150

UNIT

Collector Current-Continuous

Base Current-Continuous

I_B

Collector Power Dissipation

@T_C=25℃

P_C

℃

Junction Temperature

Storage Temperature

150

-55~150

T_J

T_stg

isc Website：www.iscsemi.cn

中文翻译

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与2SD2562O相关器件

型号	品牌	获取价格	描述	数据表
2SD2562P	SANKEN	获取价格	Power Bipolar Transistor, 15A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
2SD2562Y	SANKEN	获取价格	Power Bipolar Transistor, 15A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
2SD2565	PANASONIC	获取价格	Silicon NPN triple diffusion planer type(For high voltage-withstand switching)
2SD2568	ROHM	获取价格	Power Transistor (400V, 0.5A)
2SD2568TLP	ROHM	获取价格	Power Bipolar Transistor, 0.5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy
2SD257	ETC	获取价格	NPN Transistor
2SD2571	TOSHIBA	获取价格	NPN TRIPLE DIFFUSED TYPE (HIGH POWER SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIO
2SD2573	PANASONIC	获取价格	Silicon NPN triple diffusion planar type
2SD2573P	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 3A I(C) \| TO-126VAR
2SD2573Q	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 3A I(C) \| TO-126VAR