Datasheet > 2SD2561_01

2SD2561_01

更新时间： 2024-11-18 07:31:47

品牌	Logo	应用领域
三垦 - SANKEN		晶体晶体管
页数	文件大小	规格书
1页	29K
描述
Silicon NPN Triple Diffused Planar Transistor

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数据手册

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2SD2561_01 数据手册

Equivalent circuit

Darlington 2 S D2 5 6 1

(70Ω)

Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1648)

Absolute maximum ratings (Ta=25°C) Electrical Characteristics

Application : Audio, Series Regulator and General Purpose

(Ta=25°C)

■

External Dimensions MT-200

Symbol

I^CBO

Symbol

V^CBO

VCEO

VEBO

Conditions

Ratings

Unit

µA

Unit

±0.2

6.0

±0.3

±0.2

36.4

V^CB=150V

100max

150min

5000min

2.5max

3.0max

70typ

150

24.4

2.1

IEBO

V^EB=5V

±0.1

2-ø3.2

150

V(BR)CEO

hFE

I^C=30mA

V^CE=4V, IC=10A

I^C=10A, IB=10mA

V^CE=12V, IE=–2A

V^CB=10V, f=1MHz

VCE(sat)

VBE(sat)

200(Tc=25°C)

150

°C

MHz

+0.2

-0.1

0.65

+0.2

-0.1

COB

Tstg

120typ

–55 to +150

1.05

+0.3

-0.1

hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)

■Typical Switching Characteristics (Common Emitter)

3.0

±0.1

5.45

Weight : Approx 18.4g

a. Part No.

V^CC

(V)

(Ω)

(A)

VBB1

(V)

V^BB2

(V)

I^B1

(mA)

IB2

(mA)

ton

(µs)

tstg

(µs)

b. Lot No.

–5

–10

0.8typ

4.0typ

1.2typ

–

IC VBE Temperature Characteristics (Typical)

IC VCE Characteristics (Typical)

VCE(sat) IB Characteristics (Typical)

(VCE=4V)

10mA

IC=.15A

IC=.10A

0.5mA

IC=.5A

_IB=0.3mA

0.2

0.5

50 100 200

2.6

Collector-Emitter Voltage V^CE(V)

Base Current IB(mA)

Base-Emittor Voltage V^BE(V)

–

j-a t Characteristics

h^FEI^CCharacteristics (Typical)

h^FEI^CTemperature Characteristics (Typical)

(VCE=4V)

50000

Typ

10000

5000

10000

5000

0.5

1000

500

1000

500

0.1

100

Time t(ms)

1000 2000

0.5

Collector Current IC(A)

–

f^TIE Characteristics (Typical)

Safe Operating Area (Single Pulse)

–

Pc Ta Derating

(VCE=12V)

200

160

120

0.5

Without Heatsink

Natural Cooling

0.1

Without Heatsink

0.05

–0.02

–0.1

–1

–10

100

200

100

125

150

Collector-Emitter Voltage VCE(V)

Ambient Temperature Ta(˚C)

Emitter Current I^E(A)

157

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