2SD2423GTTL

更新时间： 2024-09-24 13:04:23

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2SD2423GTTL 数据手册

2SD2423

Silicon NPN Epitaxial, Darlington

Application

Low frequency power amplifier

Features

The transistor with a built-in zener diode of surge absorb.

Outline

UPAK

2, 4

I_D

1. Base

2. Collector

3. Emitter

4. Collector (Flange)

2 kΩ

(Typ)

0.5 Ω

(Typ)

12 3 4 5 6

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型号	品牌	获取价格	描述	数据表
2SD2423GTTR	HITACHI	获取价格	Small Signal Bipolar Transistor, 1.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, UPAK-3
2SD2423GTUL	HITACHI	获取价格	Small Signal Bipolar Transistor, 1.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, UPAK-3
2SD2423GTUL	RENESAS	获取价格	1500mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, UPAK-3
2SD2423GTUR	HITACHI	获取价格	Small Signal Bipolar Transistor, 1.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, UPAK-3
2SD2423GTUR	RENESAS	获取价格	暂无描述
2SD2425	NEC	获取价格	NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHIN
2SD2425AB1	NEC	获取价格	TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 5A I(C) \| TO-243VAR
2SD2425-AB1	NEC	获取价格	Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3
2SD2425-AB1	RENESAS	获取价格	5A, 60V, NPN, Si, POWER TRANSISTOR
2SD2425AB1-AY	RENESAS	获取价格	TRANSISTOR,BJT,NPN,60V V(BR)CEO,5A I(C),TO-243VAR