Datasheet > 2SD2401

2SD2401

更新时间： 2024-09-29 05:57:51

品牌	Logo	应用领域
锦美电子 - JMNIC		晶体晶体管放大器局域网
页数	文件大小	规格书
3页	65K
描述
Silicon NPN Power Transistors

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中文翻译

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数据手册

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2SD2401 数据手册

Product Specification

www.jmnic.com

Silicon NPN Power Transistors

2SD2401

DESCRIPTION

·With MT-200 package

·Complement to type 2SB1570

·DARLINGTON

APPLICATIONS

·Audio, Series Regulator

and General Purpose

PINNING(see Fig.2)

DESCRIPTION

Base

Collector;connected to

mounting base

Emitter

Fig.1 simplified outline (MT-200) and symbol

Absolute maximum ratings (Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

Open emitter

VALUE

160

150

UNIT

Open base

Open collector

I_B

Base current

P_C

Collectorl power dissipation

Junction temperature

Storage temperature

T_C=25℃

150

-55~150

℃

T_j

T_stg

JMnic

12 3

中文翻译

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