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2SD2351VWT106 PDF预览

2SD2351VWT106

更新时间: 2024-11-04 23:20:31
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
1页 62K
描述
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SC-70

2SD2351VWT106 数据手册

  
2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S  
Transistors  
General Purpose Transistor (50V, 0.15A)  
2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S  
!Features  
!External dimensions (Units : mm)  
2SD2654  
1) High DC current gain.  
2) High emitter-base voltage. (VCBO=12V)  
3) Low saturation voltage.  
(Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA)  
( )  
1
( )  
2
( )  
3
0.8  
1.6  
0.1Min.  
ROHM : EMT3  
EIAJ : SC-75A  
(1) Emitter  
(2) Base  
!Absolute maximum ratings (Ta = 25°C)  
(3) Collector  
Parameter  
Symbol  
Limits  
60  
Unit  
Collector-base voltage  
VCBO  
VCEO  
VEBO  
V
V
2SD2351  
Collector-emitter voltage  
Emitter-base voltage  
50  
12  
V
0.15  
0.2  
A (DC)  
A (Pulse)  
Collector current  
IC  
1.25  
2.1  
2SD2654  
0.15  
0.2  
Collector power  
dissipation  
2SD2351, 2SD2226K  
2SD2227S  
P
C
W
0.3  
Junction temperature  
Storage temperature  
Single pulse Pw=100ms  
Tj  
150  
°C  
°C  
Tstg  
55~+150  
0.1Min.  
ROHM : UMT3  
EIAJ : SC-70  
(1) Emitter  
(2) Base  
(3) Collector  
Each lead has same dimensions  
2SD2226K  
!Packaging specifications and hFE  
2SD2226K 2SD2227S  
Type  
2SD2654  
EMT3  
VW  
2SD2351  
UMT3  
VW  
SMT3  
VW  
SPT  
W
Package  
1.6  
hFE  
2.8  
Marking  
Code  
TP  
BJ  
BJ  
BJ  
TL  
T106  
3000  
T146  
3000  
Basic ordering unit (pieces)  
3000  
5000  
(1) Emitter  
(2) Base  
0.3Min.  
ROHM : SMT3  
EIAJ : SC-59  
Denotes  
hFE  
(3) Collector  
Each lead has same dimensions  
2SD2227S  
4
2
0.45  
0.45  
2.5 0.5  
5
2
(1) Emitter  
(2) Collector  
(3) Base  
ROHM : SPT  
EIAJ : SC-72  
( )  
1
(
)
( )  
3
Taping specifications  
!Electrical characteristics (Ta = 25°C)  
Parameter  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cutoff current  
Symbol  
Min.  
60  
50  
12  
Typ. Max.  
Unit  
Conditions  
BVCBO  
V
V
I
I
I
C
=10µA  
=1mA  
BVCEO  
BVEBO  
C
V
E
=10µA  
CB=50V  
EB=12V  
I
CBO  
EBO  
CE(sat)  
250  
3.5  
0.3  
0.3  
0.3  
2700  
2700  
µA  
µA  
V
V
V
Emitter cutoff current  
I
Collector-emitter saturation voltage  
V
I
C
/I  
B
=50mA/5mA  
2SD2654, 2SD2351, 2SD2226K  
2SD2227S  
560  
1200  
MHz  
pF  
V
V
V
V
CE/I  
C
=5V/1mA  
=5V/1mA  
DC current  
transfer ratio  
hFE  
CE/I  
C
Transition frequency  
Output capacitance  
f
T
CE=5V, I  
CB=5V, I  
E
=−10mA, f=100MHz  
=0A, f=1MHz  
Cob  
E
Measured using pulse current.  
1/1  

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