Datasheet > 2SD2318

2SD2318

更新时间： 2024-10-01 12:55:35

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科信 - KEXIN		晶体晶体管
页数	文件大小	规格书
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描述
High-current gain Power Transistor

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中文翻译

获取价格

数据手册

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2SD2318 数据手册

SMD Type

Transistors

High-current gain Power Transistor

2SD2318

TO-252

Unit: mm

6.50^+0.15

Features

-0.15

2.30^+0.1

-0.1

5.30^+0.2

0.50^+0.8

-0.7

-0.2

High DC current gain.

Low saturation voltage.

0.127

max

0.80^+0.1

-0.1

0.60^+0.1

2.3

4.60^+0.15

-0.1

1 Base

-0.15

2 Collector

3 Emitter

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

V^CBO

Rating

Unit

V^CEO

V^EBO

Collector current

I^C

4.5

A(Pulse)*

Collector current (pulse) *

Collector power dissipation

Tc = 25

I^CP

4.5

Junction temperature

Storage temperature

150

Tstg

-55 to +150

* Pw=100ms.

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

BV^CBOIC=50ìA

BV^CEOIC=1mA

BV^EBOIE=50ìA

I^CBO

I^EBO

VCB=80V

VEB=6V

100

1.0

ìA

Emitter cutoff current

Collector-emitter saturation voltage

Base-emitter saturation voltage

DC current transfer ratio

V^CE(sat)IC=2 A, IB=0.05A

V^BE(sat)IC=2 A, IB=0.05A

1.5

h^FE

f^T

VCE=4V, IC=0.5A

560

1800

Output capacitance

VCE=5V, IE= -0.2A, f=10MHz

VCB=10V, IE=0A, f=1MHz

MHz

Transition frequency

C^ob

hFE Classification

Rank

hFE

560 1200

820 1800

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