2SD2275

更新时间： 2024-11-20 06:20:31

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管放大器局域网
页数	文件大小	规格书
2页	227K
描述
Silicon NPN Darlington Power Transistor

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SD2275 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Darlington Power Transistor

2SD2275

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V_(BR)CEO= 100V(Min)

·High DC Current Gain-

: h_FE= 5000( Min.) @(I_C= 4A, V_CE= 5V)

·Low Collector Saturation Voltage-

: V_CE(sat)= 2.5V(Max)@ (I_C= 4A, I_B= 4mA)

·Complement to Type 2SB1502

APPLICATIONS

·Designed for power amplification.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

UNIT

120

100

Collector Current-Continuous

Collector Current-Peak

I_CM

Collector Power Dissipation

@T_a=25℃

3.5

P_C

Collector Power Dissipation

@T_C=25℃

Junction Temperature

Storage Temperature

150

-55~150

℃

T_J

T_stg

isc Website：www.iscsemi.cn

中文翻译

下载PDF

与2SD2275相关器件

型号	品牌	获取价格	描述	数据表
2SD2275P	PANASONIC	获取价格	Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
2SD2275Q	PANASONIC	获取价格	暂无描述
2SD2275S	PANASONIC	获取价格	Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
2SD2276	ISC	获取价格	Silicon NPN Darlington Power Transistor
2SD2276	PANASONIC	获取价格	Silicon NPN triple diffusion planar type Darlington(For power amplification)
2SD2276P	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 140V V(BR)CEO \| 8A I(C) \| TO-247VAR
2SD2276Q	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 140V V(BR)CEO \| 8A I(C) \| TO-247VAR
2SD2276S	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 140V V(BR)CEO \| 8A I(C) \| TO-247VAR
2SD2279	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 5A I(C) \| SIP
2SD2279P	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 5A I(C) \| SIP