Datasheet > 2SD2153

2SD2153

更新时间： 2024-11-19 14:55:43

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	1919K
描述
SOT-89-3L

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中文翻译

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数据手册

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2SD2153 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-89-3L Plastic-Encapsulate Transistors

SOT-89-3L

2SD2153 TRANSISTOR (NPN)

1. BASE

FEATURES



Low saturation voltage

Excellent DC current gain characteristics

2. COLLECTOR

3. EMITTER



MARKING: DN

D N

Solid dot = Green molding compound device.

MAXIMUM RATINGS(Ta=25℃ unless otherwise noted)

Symbol

VCBO

VCEO

V^EBO

I^C

Parameter

Value

Unit

Collector -Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Pulsed Collector Current

Collector Dissipation

ICP^*

0.5

R_θJA

T_J,Tstg

Thermal Resistance from Junction to Ambient

250

℃/ W

Operation Junction and Storage Temperature Range

-55~+150

℃

ELECTRICAL CHARACTERISTICS(T_a=25℃ unless otherwise noted)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

I_C=50μA,I_E=0

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C=1mA,I_B=0

I_E=50μA, I_C=0

V_CB=20V,I_E=0

0.5

μA

Emitter cut-off current

I_EBO

V_EB=5V,I_C=0

DC current gain

h_FE

V_CE=6V,I_C=500mA

I_C=1A,I_B=20mA

560

2700

0.5

Collector-emitter saturation voltage

Transition frequency

V_CE(sat)

f_T

V_CE=10V,I_C=10mA,f=100MHz

V_CB=10V, I_E=0,f=1MHz

110

MHz

Collector capacitance

C_ob

*Single pulse, P_W=10ms

CLASSIFICATION OF h_FE

Rank

560~1200

820~1800

1200~2700

Range

www.jscj-elec.com

Rev. - 2.2

12 3 4

中文翻译

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