Datasheet > 2SD2121S

2SD2121S

更新时间： 2024-11-17 07:31:39

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管放大器
页数	文件大小	规格书
1页	40K
描述
Silicon NPN Epitaxial

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数据手册

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2SD2121S 数据手册

SMD Type

Transistors

Silicon NPN Epitaxial

2SD2121S

TO-252

Unit: mm

6.50^+0.15

-0.15

2.30^+0.1

-0.1

5.30^+0.2

0.50^+0.8

-0.7

Features

-0.2

Low frequency power amplifier.

0.127

max

0.80^+0.1

-0.1

0.60^+0.1

2.3

4.60^+0.15

-0.1

1 Base

-0.15

2 Collector

3 Emitter

Absolute Maximum Ratings Ta = 25

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

2.5

Peak collector current

I^CP

Collector power dissipation

Junction temperature

Storage temperature

T^C= 25

150

Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

V^(BR)CBOIC = 1 mA, IE = 0

V^(BR)CEO

Testconditons

Min

Typ

Max

Unit

Collector to base breakdown voltage

Collector to emitter breakdown voltage

Emitter to base breakdown voltage

Collector cutoff current

IC = 10 mA, RBE =

V^(BR)EBOIE = 1 mA, IC = 0

I^CBO

h^FE

VCB = 35 V, IE = 0

V^CE= 2 V,IC = 0.5 A

V^CE= 2 V,IC = 1.5 A

VCE = 2 V,IC = 1.5 A

ìA

320

DC current transfer ratio *

Base to emitter voltage *

V^BE

1.5

1.0

Collector to emitter saturation voltage *

V^CE(sat)IC = 2 A,IB = 0.2 A

* Pulse test.

hFE Classification

Marking

hFE

60 120

100 200

160 320

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