Datasheet > 2SD2115S

2SD2115S

更新时间： 2024-10-01 06:22:23

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描述
Silicon NPN Epitaxial

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数据手册

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2SD2115S 数据手册

SMD Type

Transistors

Silicon NPN Epitaxial

2SD2115S

TO-252

Unit: mm

6.50^+0.15

-0.15

2.30^+0.1

-0.1

Features

5.30^+0.2

0.50^+0.8

-0.7

-0.2

Low frequency power amplifier.

0.127

max

0.80^+0.1

-0.1

0.60^+0.1

2.3

4.60^+0.15

-0.1

1 Base

-0.15

2 Collector

3 Emitter

Absolute Maximum Ratings Ta = 25

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

150

2.5

Peak collector current

Collector power dissipation

Junction temperature

I^CP

P^C

150

Storage temperature

Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

V^(BR)CBOIC = 1 mA, IE = 0

V^(BR)CEO

Testconditons

Min

150

Typ

Max

Unit

Collector to base breakdown voltage

Collector to emitter breakdown voltage

Emitter to base breakdown voltage

Collector cutoff current

IC = 10 mA, RBE =

V^(BR)EBOIE = 1 mA, IC = 0

I^CBO

h^FE

VCB = 100 V, IE = 0

VCE = 5 V,IC = 1.5 A

ìA

DC current transfer ratio

150

Collector to emitter saturation voltage

Base to emitter saturation voltage

Fall time

V^CE(sat)IC = 1.5 A,IB = 0.05 A

V^BE(sat)IC = 1.5 A,IB = 0.05 A

0.8

1.3

0.6

t^f

IC = 1.5 A,IB = -IB2 =50 mA

ìs

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