生命周期: | Obsolete | 包装说明: | DPAK-3 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.49 |
Is Samacsys: | N | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 2 A | 集电极-发射极最大电压: | 60 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 150 |
JESD-30 代码: | R-PSIP-T3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 18 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SD2115S | TYSEMI |
获取价格 |
Low frequency power amplifier.Collector to base voltage VCBO 150 V | |
2SD2115S | RENESAS |
获取价格 |
Silicon NPN Epitaxial Planar | |
2SD2115S | KEXIN |
获取价格 |
Silicon NPN Epitaxial | |
2SD2115S | HITACHI |
获取价格 |
Silicon NPN Epitaxial Planar(Low frequency power amplifier) | |
2SD2116 | SANYO |
获取价格 |
General Driver Applications | |
2SD2117 | SANYO |
获取价格 |
General Driver Applications | |
2SD2118 | ROHM |
获取价格 |
Low VCE(sat) Transistor(Strobe flash) | |
2SD2118 | SECOS |
获取价格 |
NPN Silicon General Purpose Transistor | |
2SD2118 | TRSYS |
获取价格 |
Plastic-Encapsulated Transistors | |
2SD2118 | KEXIN |
获取价格 |
Low VCE(sat) Transistor |