JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
SOT-89-3L
2SD2098 FEATURES
1. BASE
z
z
Excellent DC current gain characteristics
Complements the 2SB1386
2. COLLECTOR
3. EMITTER
1
2
MARKING
3
AHQ
AHR
Solid dot = Green molding
compound device.
120-270
180-390
MAXIMUM RATINGS (Ta=25 unless otherwise noted)
℃
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
50
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
20
V
6
V
Collector Current -Continuous
Collector Power Dissipation
5
A
PC
500
mW
Operation Junction and
Storage Temperature Range
TJ,Tstg
-55~150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
50
20
6
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO IC=50μA,IE=0
V(BR)CEO IC=1mA,IB=0
V(BR)EBO IE=50μA, =0
V
V
ICBO
IEBO
hFE
VCB=40V,IE=0
0.5
0.5
390
1
μA
μA
Emitter cut-off current
VEB=5V,IC=0
DC current gain
VCE=2V,IC=0.5A
120
Collector-emitter saturation voltage
Transition frequency
VCE(sat)
fT
IC=4A,IB=100mA
VCE=6V,IC=50mA,f=100MHz
VCB=20V,IE=0,f=1MHz
V
150
30
MHz
pF
Collector output capacitance
Cob
CLASSIFICATION OF hFE
Rank
Q
R
Range
120-270
AHQ
180-390
AHR
Marking
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1
Rev. - 2.2