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2SD2061F PDF预览

2SD2061F

更新时间: 2024-10-30 20:15:55
品牌 Logo 应用领域
无锡固电 - ISC /
页数 文件大小 规格书
3页 125K
描述
Transistor

2SD2061F 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.6
Is Samacsys:NBase Number Matches:1

2SD2061F 数据手册

 浏览型号2SD2061F的Datasheet PDF文件第2页浏览型号2SD2061F的Datasheet PDF文件第3页 
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2SD2061  
DESCRIPTION  
·
·With TO-220Fa package  
·Low collector saturation voltage  
·Excellent DC current gain characteristics  
·Wide safe operating area  
APPLICATIONS  
·For low frequency power  
amplifier applications  
PINNING  
PIN  
1
DESCRIPTION  
Base  
2
Collector  
Emitter  
Fig.1 simplified outline (TO-220Fa) and symbol  
3
Absolute maximum ratings (Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
CONDITIONS  
VALUE  
UNIT  
Open emitter  
Open base  
80  
V
V
V
A
A
60  
Open collector  
5
Collector current (DC)  
Collector current-Peak  
3
ICM  
6
30  
TC=25  
Ta=25℃  
PC  
Collector power dissipation  
W
2
Junction temperature  
Storage temperature  
150  
-55~150  
Tj  
Tstg  

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