是否Rohs认证: | 符合 | 生命周期: | Active |
Reach Compliance Code: | compliant | 风险等级: | 5.61 |
最大集电极电流 (IC): | 2 A | 配置: | Single |
最小直流电流增益 (hFE): | 800 | 最高工作温度: | 150 °C |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 2 W |
子类别: | Other Transistors | 表面贴装: | YES |
标称过渡频率 (fT): | 150 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SD1950VM-T2-AZ | RENESAS |
获取价格 |
Small Signal Bipolar Transistor, 2A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, POWER, MI | |
2SD1952 | NEC |
获取价格 |
Small Signal Bipolar Transistor, 3A I(C), 16V V(BR)CEO, 1-Element, NPN, Silicon, POWER, PL | |
2SD1952-T1 | NEC |
获取价格 |
Small Signal Bipolar Transistor, 3A I(C), 16V V(BR)CEO, 1-Element, NPN, Silicon, POWER, PL | |
2SD1952-T1XP | NEC |
获取价格 |
Small Signal Bipolar Transistor, 3A I(C), 16V V(BR)CEO, 1-Element, NPN, Silicon, POWER, PL | |
2SD1952-T1XQ | NEC |
获取价格 |
Small Signal Bipolar Transistor, 3A I(C), 16V V(BR)CEO, 1-Element, NPN, Silicon, POWER, PL | |
2SD1952-T1XR | NEC |
获取价格 |
Small Signal Bipolar Transistor, 3A I(C), 16V V(BR)CEO, 1-Element, NPN, Silicon, POWER, PL | |
2SD1953 | SANYO |
获取价格 |
Driver Applications | |
2SD1953-LS | ONSEMI |
获取价格 |
Power Bipolar Transistor, 1.5A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plast | |
2SD1956 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 7A I(C) | TO-220 | |
2SD1956/E | ROHM |
获取价格 |
Power Bipolar Transistor, 7A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast |