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2SD1949

更新时间: 2024-11-17 06:23:27
品牌 Logo 应用领域
科信 - KEXIN 晶体晶体管
页数 文件大小 规格书
1页 46K
描述
Medium Power Transistor

2SD1949 数据手册

  
SMD Type  
Transistors  
Medium Power Transistor  
2SD1949  
Features  
High current.(IC=5A)  
Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA.  
1 Emitter  
2 Base  
3 Collector  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-base voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
Unit  
V
50  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
50  
V
5
0.5  
V
A
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
0.2  
W
Tj  
150  
Tstg  
-55 to +150  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
Testconditons  
Min  
50  
50  
5
Typ  
Max  
Unit  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cutoff current  
BVCBO IC=1mA  
BVCEO VCB=30V  
BVEBO VEB=4V  
V
V
ICBO  
IEBO  
hFE  
VCE/IC=3V/0.01A  
0.5  
0.5  
390  
0.4  
ìA  
ìA  
Emitter cutoff current  
VCE=5V , IE= -20mA , f=100MHz  
VCB=10V , IE=0A , f=1MHz  
DC current transfer ratio  
Collector-emitter saturation voltage  
Output capacitance  
120  
VCE(sat) IC=100ìA  
V
fT  
IE=100ìA  
250  
6.5  
MHz  
pF  
Transition frequency  
Cob  
IC/IB=150mA/15mA  
hFE Classification  
Y
Marking  
Rank  
hFE  
Q
R
120 270  
180 390  
1
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