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2SD1913 PDF预览

2SD1913

更新时间: 2024-02-07 22:52:43
品牌 Logo 应用领域
SAVANTIC 晶体晶体管
页数 文件大小 规格书
4页 249K
描述
Silicon NPN Power Transistors

2SD1913 数据手册

 浏览型号2SD1913的Datasheet PDF文件第2页浏览型号2SD1913的Datasheet PDF文件第3页浏览型号2SD1913的Datasheet PDF文件第4页 
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2SD1913  
DESCRIPTION  
·With TO-220F package  
·Complement to type 2SB1274  
·High reliability.  
·High breakdown voltage  
·Low saturation voltage.  
·Wide area of safe operation  
APPLICATIONS  
·60V/3A low-frequency power amplifier  
·General power amplifier applications  
PINNING  
PIN  
DESCRIPTION  
1
Base  
2
Collector  
Emitter  
Fig.1 simplified outline (TO-220F) and symbol  
3
Absolute maximum ratings (Ta=25ꢀ )  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
CONDITIONS  
Open emitter  
VALUE  
UNIT  
60  
V
V
V
A
A
Open base  
60  
Open collector  
6
3
ICM  
Collector current-peak  
8
20  
TC=25ꢀ  
PC  
Collector dissipation  
W
2
Tj  
Junction temperature  
Storage temperature  
150  
-55~150  
Tstg  

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