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2SD1913

更新时间： 2024-02-12 00:35:57

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
4页	120K
描述
Silicon NPN Power Transistors

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中文翻译

获取价格

技术参数
数据手册

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2SD1913 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.58
Base Number Matches：	1

2SD1913 数据手册

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2SD1913

DESCRIPTION

·With TO-220F package

·Complement to type 2SB1274

·High reliability.

·High breakdown voltage

·Low saturation voltage.

·Wide area of safe operation

APPLICATIONS

·60V/3A low-frequency power amplifier

·General power amplifier applications

PINNING

DESCRIPTION

Base

Collector

Emitter

Fig.1 simplified outline (TO-220F) and symbol

Absolute maximum ratings (Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

Open emitter

VALUE

UNIT

Open base

Open collector

I_CM

Collector current-peak

T_C=25℃

P_C

Collector dissipation

T_j

Junction temperature

Storage temperature

150

℃

T_stg

-55~150

12 3 4

中文翻译

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与2SD1913相关器件

型号	品牌	获取价格	描述	数据表
2SD1913Q	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 3A I(C) \| TO-220
2SD1913R	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 3A I(C) \| TO-220
2SD1913S	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 3A I(C) \| TO-220
2SD1914	SANYO	获取价格	NPN EPITAXIAL PLANAR SILICON DARLINGTON TRANSISTOR DRIVER APPLICATIONS
2SD1915	ETC	获取价格
2SD1918	ROHM	获取价格	Power Transistor (160V , 1.5A)
2SD1918	KEXIN	获取价格	Silicon NPN Epitaxial
2SD1918	TYSEMI	获取价格	High breakdown voltage.(BVCEO = 160V) High transition frequency.(fT = 80MHZ)
2SD1918/N	ROHM	获取价格	Small Signal Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon,
2SD1918/NP	ROHM	获取价格	Small Signal Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon,