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2SD1894 PDF预览

2SD1894

更新时间: 2024-11-07 05:56:23
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管放大器局域网
页数 文件大小 规格书
3页 130K
描述
Silicon NPN Power Transistors

2SD1894 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.61
Base Number Matches:1

2SD1894 数据手册

 浏览型号2SD1894的Datasheet PDF文件第2页浏览型号2SD1894的Datasheet PDF文件第3页 
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2SD1894  
DESCRIPTION  
·
·With TO-3PFa package  
·High DC current gain  
·Low collector saturation voltage  
·Complement to type 2SB1254  
APPLICATIONS  
·Power amplification  
·Optimum for 60W high-fidelity  
output applications  
PINNING  
PIN  
1
DESCRIPTION  
Base  
2
Collector  
Emitter  
3
Absolute maximum ratings(Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
CONDITIONS  
Open emitter  
VALUE  
UNIT  
160  
V
V
V
A
A
Open base  
140  
Open collector  
5
7
12  
ICP  
Collector current-peak  
TC=25  
70  
PC  
Collector power dissipation  
W
3
Tj  
Junction temperature  
Storage temperature  
150  
-55~150  
Tstg  

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