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2SD1862 PDF预览

2SD1862

更新时间: 2024-10-31 14:52:59
品牌 Logo 应用领域
先科 - SWST /
页数 文件大小 规格书
5页 248K
描述
功率三极管

2SD1862 数据手册

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2SD1862  
NPN Silicon Epitaxial Planar Power Transistor  
Features  
• The transistor is subdivided into two groups, O  
and Y, according to its DC current gain  
Applications  
1. Emitter 2. Collector 3. Base  
TO-92 Plastic Package  
• Switching and AF amplifier  
Absolute Maximum Ratings (Ta = 25)  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
Unit  
V
Collector Base Voltage  
Collector Emitter Voltage  
Emitter Base Voltage  
Collector Current  
30  
30  
V
5
V
2
A
Power Dissipation  
Ptot  
1
W
Junction Temperature  
Storage Temperature Range  
Tj  
150  
Tstg  
- 55 to + 150  
Thermal Characteristics  
Parameter  
Symbol  
RθJA  
Max.  
125  
Unit  
Thermal Resistance from Junction Ambient  
℃/W  
1 / 5  
®
Dated: 25/06/2023 CL Rev: 01  

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