Datasheet > 2SD1816R

2SD1816R

更新时间： 2023-12-06 20:11:03

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先科 - SWST		/
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描述
功率三极管

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数据手册

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2SD1816R 数据手册

2SD1816R-HAF

NPN Silicon Epitaxial Planar Power Transistor

Features

• Low Collector−Emitter Saturation Voltage

• High-speed switching

• Halogen and Antimony Free(HAF), RoHS compliant

Applications

1.Base 2.Collector 3.Emitter

TO-252 Plastic Package

• Suitable for relay drivers, high speed inverters, converters,

and other high current switching applications

Absolute Maximum Ratings (T_a= 25

Parameter

)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

120

100

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

Peak Collector Current, Pulsed

I_CM

T_a= 25

T_C= 25

Power Dissipation

P_D

Junction Temperature

T_j

150

Storage Temperature Range

T_stg

- 55 to + 150

Thermal Characteristics

Parameter

Symbol

R_θJA

Max.

125

3.6

Unit

Thermal Resistance from Junction to Ambient ¹⁾

Thermal Resistance from Junction to Case

R_θJC

¹⁾Device mounted on FR-4 PCB with minimum recommended pad layout.

1 / 5

Dated: 06/03/2023 Rev:02

12 3 4 5

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