Datasheet > 2SD1816-Q

2SD1816-Q

更新时间： 2024-11-02 01:06:03

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
3页	1162K
描述
NPN Transistors

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中文翻译

获取价格

数据手册

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2SD1816-Q 数据手册

SMD Type

Transistors

NPN Transistors

2SD1816

TO-252

Unit: mm

+0.15

-0.15

6.50

+0.1

-0.1

2.30

+0.8

-0.7

+0.2

5.30

-0.2

0.50

■ Features

● Low Collector-to-Emitter Saturation Voltage

● Fast Switching Speed

● High fT.

0.127

max

+0.1

-0.1

0.80

● Complementary to 2SB1216

0.1

0.60⁺_-

1 Base

2.3

4.60

+0.15

-0.15

2 Collector

3 Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Symbol

Rating

Unit

VCBO

VCEO

VEBO

120

100

Collector Current - Continuous

Collector Current - Pulse

Collector Power Dissipation

Junction Temperature

℃

150

Storage Temperature Range

stg

-40 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

120

100

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

Ic= 100 μA， I

Ic= 1 mA， RBE= ∞

= 100μA， I = 0

CB= 100 V , I = 0

EB= 5V , I =0

E= 0

CBO

EBO

Collector-emitter saturation voltage

Base - emitter saturation voltage

CE(sat)

BE(sat)

=2 A, I

=200mA

0.15

0.9

0.4

1.2

400

=2 A, I

hFE(1)

CE= 5V, I

= 500mA

= 3 A

DC current gain

hFE(2)

Turn-on Time

100

900

See Test Circuit

Storage Time

stg

Fall Time

Collector output capacitance

Transition frequency

^CB= 10V, I

^CE= 10V, I

= 0,f=1MHz

= 500 mA

180

MHz

■ Classification of hfe(1)

Type

2SD1816-Q

70-140

2SD1816-R

100-200

2SD1816-S

140-280

2SD1816-T

200-400

Range

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中文翻译

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