Datasheet > 2SD1804R-HAF

2SD1804R-HAF

更新时间： 2024-11-02 14:55:03

品牌	Logo	应用领域
先科 - SWST		/
页数	文件大小	规格书
5页	922K
描述
功率三极管

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数据手册

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2SD1804R-HAF 数据手册

2SD1804R-HAF

NPN Silicon Epitaxial Planar Power Transistor

Feature

• Low Collector-to-Emitter Saturation Voltage

• Fast Switching Speed

• High Current And High fT

• Halogen and Antimony Free(HAF)

RoHS compliant

1. Base 2. Collector 3. Emitter

TO-252 Plastic Package

Absolute Maximum Ratings (T_a= 25 )

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

Peak Collector Current, Pulsed

I_CM

T_a= 25

Power Dissipation

T_C= 25

P_tot

Junction Temperature

T_j

150

Storage Temperature Range

T_Stg

- 55 to + 150

Thermal Resistance Ratings

Parameter

Symbol

R_θJA

Max.

125

Unit

Thermal Resistance from Junction to Ambient ¹⁾

Thermal Resistance from Junction to Case

R_θJC

6.25

¹⁾Device mounted on FR-4 substrate PC board, with minimum recommended pad layout.

1 / 5

Dated: 07/03/2023 Rev: 02

12 3 4 5

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