Datasheet > 2SD1804R(TO-252)

2SD1804R(TO-252)

更新时间： 2024-11-01 19:07:55

品牌	Logo	应用领域
友顺 - UTC		/
页数	文件大小	规格书
4页	195K
描述
Transistor

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中文翻译

获取价格

技术参数
数据手册

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2SD1804R(TO-252) 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.61	最大集电极电流 (IC)：	8 A
配置：	Single	最小直流电流增益 (hFE)：	100
最高工作温度：	150 °C	极性/信道类型：	NPN
最大功率耗散 (Abs)：	20 W	子类别：	Other Transistors
表面贴装：	YES	Base Number Matches：	1

2SD1804R(TO-252) 数据手册

UTC2SD1804 NPN EPITAXIAL PLANAR SILICON TRANSISTOR

HIGH CURRENT SWITCHING

APPLICATIONS

The UTC 2SD1804 applies to relay drivers, high-speed

inverters, converters, and other general high-current

switching applications.

FEATURES

*Low collector-to-emitter saturation voltage

*High current and high fT

*Excellent linerarity of h^FE.

*Fast switching time

*Small and slim package making it easy to make 2SD1804

applied sets smaller.

TO-252

1: BASE 2: COLLECTOR 3: EMITTER

ABSOLUTE MAXIMUM RATINGS ^{(Ta=25°C, unless otherwise specified)}

PARAMETER

Collector-Base Voltage

SYMBOL

VCBO

VCEO

VEBO

VALUE

UNIT

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Dissipation

°C

Tc=25°C

Icp

Tstg

Collector Current

Collector Current(PULSE)

Junction Temperature

Storage Temperature

150

-55 ~ +150

ELECTRICAL CHARACTERISTICS ^{(Ta=25°C, unless otherwise specified)}

PARAMETER

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

SYMBOL

ICBO

TEST CONDITIONS

VCB=40V,IE=0

VEB=4V,IC=0

MIN TYP MAX UNIT

400

µA

IEBO

h_FE1

h_FE2

VCE=2V, Ic=0.5A

VCE=2V, Ic=6A

VCE=5V,Ic=1A

Gain-Bandwidth Product

Output Capacitance

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

180

200

0.95

MHz

Cob

VCE(sat)

VBE(sat)

VCE=10V,f=1MHz

IC=4A,IB=0.2A

400

1.3

UTC UNISONIC TECHNOLOGIES CO. LTD

QW-R209-006,A

12 3 4

中文翻译

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